- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 41/23 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
Patent holdings for IPC class H10B 41/23
Total number of patents in this class: 14
10-year publication summary
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2
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5
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4
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| 2015 | 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 36809 |
3 |
| Kioxia Corporation | 9847 |
3 |
| Yangtze Memory Technologies Co., Ltd. | 1940 |
2 |
| Samsung Electronics Co., Ltd. | 131630 |
1 |
| Micron Technology, Inc. | 24960 |
1 |
| SK Hynix Inc. | 11030 |
1 |
| National Institute of Advanced Industrial Science and Technology | 3677 |
1 |
| National University of Singapore | 2228 |
1 |
| ULVAC, Inc. | 1448 |
1 |
| Other owners | 0 |